9 In 1 - x Ga x As a next generation material for photodetectors
نویسنده
چکیده
Analytical results have been presented for an optically illuminated InGaAs MESFET with opaque gate. The excess carriers due to photo generation are obtained by solving the continuity equation. The energy levels are modified due to generation of carriers. The results of I–V characteristics under dark condition and under illumination have been compared and contrasted with the GaAs MESFET.
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